Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers.
نویسندگان
چکیده
We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.
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ورودعنوان ژورنال:
- Optics express
دوره 16 22 شماره
صفحات -
تاریخ انتشار 2008